JGDN132
JGDN132
HJT Bifacial Module
695W~730W
  • Based on 210mm wafer, N-type bifacial HJT half-cut cells

  • Module power up to 730W; module efficiency up to 23.50%

  • Use super MBB half-cut cell technology to minimize micro-crack impacts, so no cutting loss on modules

  • Power output from the front is 4.1% more than that of TOPCon module, and power output from the back is 14.76% more than that of TOPCon module

  • No Boron-Oxygen-Induced Degradation (BO-LID), excellent anti-LeTID & anti-PID performance. Low power degradation, and high energy yield

  • With the temperature coefficient -0.243%/℃

Product advantages

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